Si9947DY
Dual P-Channel Enhancement-Mode
MOSFET
Product Summary
VDS (V)
rDS(on) (W)
ID (A)
0.
10 @ VGS = –10 V
"3.
5
–20
0.
19 @ VGS = –4.
5 V
"2.
5
Recommended upgrade: Si4947DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6955DQ
S1
S2
SO-8
S1 1 G1 2 S2 3 G2 4
Top View
8 D1 7 D1 6 D2 5 D2
G1 G2
D1 D1 PĆChannel
MOSFET
D2 D2 PĆChannel
MOSFET
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA...