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SIDC11D60SIC3

Silicon Carbide Schottky Diode

Description

SIDC11D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • Ideal diode for Power Factor Correction • No forward recovery Applications: • SMPS, PFC, snubber A C Chip...


Infineon Technologies AG

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