Part Number
|
SIDC53D120H8 |
Manufacturer
|
Infineon |
Description
|
Fast switching diode |
Published
|
Jun 10, 2020 |
Detailed Description
|
SIDC53D120H8
Fast switching diode chip in Emitter Controlled Technology
Features:
1200V Emitter Controlled technolog...
|
Datasheet
|
SIDC53D120H8
|
Overview
SIDC53D120H8
Fast switching diode chip in Emitter Controlled Technology
Features:
1200V Emitter Controlled technology 120 µm chip
Soft, fast switching Low reverse recovery charge Small temperature coefficient Qualified according to JEDEC for target
applications
Recommended for:
Power modules and discrete devices
Applications:
SMPS, resonant applications, drives
Chip Type
VR
IFn
SIDC53D120H8 1200V 100A
Die Size 7.
3 x 7.
3 mm2
Package sawn on foil
Mechanical Parameters
Die size Area total
7.
3 x 7.
3 53.
29
mm2
Anode pad size
6.
346 x 6.
346
Thickness
120
µm
Wafer size
200
mm
Max.
possible chips per wafer
490
Passivation frontside
Photoimide
Pad metal
3200 nm ...
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