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SIGC128T170R3

Part Number SIGC128T170R3
Manufacturer Infineon Technologies
Description IGBT
Published Sep 15, 2007
Detailed Description com SIGC128T170R3 IGBT Chip FEATURES: • 1700V Trench + Field Stop technology • low turn-off losses • sh...
Datasheet SIGC128T170R3




Overview
com SIGC128T170R3 IGBT Chip FEATURES: • 1700V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC128T170R3 VCE ICn Die Size 11.
33 x 11.
33 mm2 Package sawn on foil Ordering Code Q67050A4189-A001 1700V 100A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 11.
33 x 11.
33 8 x (...






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