Part Number
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SIGC128T170R3 |
Manufacturer
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Infineon Technologies |
Description
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IGBT |
Published
|
Sep 15, 2007 |
Detailed Description
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com
SIGC128T170R3
IGBT Chip
FEATURES: • 1700V Trench + Field Stop technology • low turn-off losses • sh...
|
Datasheet
|
SIGC128T170R3
|
Overview
com
SIGC128T170R3
IGBT Chip
FEATURES: • 1700V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling
3
This chip is used for: • power module
C
Applications: • drives
G
E
Chip Type SIGC128T170R3
VCE
ICn
Die Size 11.
33 x 11.
33 mm2
Package sawn on foil
Ordering Code Q67050A4189-A001
1700V 100A
MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 11.
33 x 11.
33 8 x (...
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