Part Number
|
SIGC158T120R3LE |
Manufacturer
|
Infineon |
Description
|
IGBT |
Published
|
Feb 14, 2016 |
Detailed Description
|
SIGC158T120R3LE
IGBT3 Power Chip
Features: 1200V Trench & Field Stop technology low turn-off losses short tail c...
|
Datasheet
|
SIGC158T120R3LE
|
Overview
SIGC158T120R3LE
IGBT3 Power Chip
Features: 1200V Trench & Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling
This chip is used for: power modules
Applications: drives
Chip Type
VCE
IC
Die Size
SIGC158T120R3LE 1200V 150A 12.
56 x 12.
56 mm2
C
G E
Package sawn on foil
Mechanical Parameters Raster size Emitter pad size (incl.
gate pad) Gate pad size Area total Thickness Wafer size Max.
possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
12.
56 x 12.
56
8 x (5.
423 x 2.
641) 1.
320 x 0.
821
mm2
157.
8
120 µm
200 mm
156
Photoi...
Similar Datasheet
- SIGC158T120R3L IGBT - Infineon Technologies