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SIGC18T60UN

Part Number SIGC18T60UN
Manufacturer Infineon
Description High Speed IGBT
Published Apr 24, 2019
Detailed Description SIGC18T60UN High Speed IGBT Chip in NPT-technology FEATURES: • low Eoff • 600V NPT technology • 100µm chip • short cir...
Datasheet SIGC18T60UN





Overview
SIGC18T60UN High Speed IGBT Chip in NPT-technology FEATURES: • low Eoff • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • SGP20N60HS Applications: • Welding • PFC • UPS C G E Chip Type SIGC18T60UN VCE ICn Die Size 600V 20A 4.
3 x 4.
3 mm2 Package Ordering Code sawn on foil Q67050-A4222A101 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 4.
3 x 4.
3 mm2 18.
5 /...






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