SIGC28T60 IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module • discrete components Applications: • drives C G E Chip Type SIGC28T60 VCE 600V ICn 50A Die Size 6.
57 x 4.
2 mm2 Package sawn on foil Ordering Code Q67050A4337-A101 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject ink dot size Recommended storage environ...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)