Part Number
|
SIGC57T120R3L |
Manufacturer
|
Infineon Technologies |
Description
|
IGBT |
Published
|
Sep 15, 2007 |
Detailed Description
|
com
SIGC57T120R3L
IGBT Chip
FEATURES: • 1200V Trench + Field Stop technology • 120µm chip • low turn-of...
|
Datasheet
|
SIGC57T120R3L
|
Overview
com
SIGC57T120R3L
IGBT Chip
FEATURES: • 1200V Trench + Field Stop technology • 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling
3
This chip is used for: • power module
C
Applications: • drives
G
E
Chip Type SIGC57T120R3L
VCE 1200V
ICn 50A
Die Size 7.
6 x 7.
53 mm2
Package sawn on foil
Ordering Code Q67050A4267-A101
MECHANICAL PARAMETER: Raster size Emitter pad size ( include gate pad ) Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage ...
Similar Datasheet
- SIGC57T120R3LE IGBT - Infineon
- SIGC57T120R3E IGBT - Infineon
- SIGC57T120R3 IGBT - Infineon Technologies