SIGC68T170R3E IGBT3 Power Chip Features:  1700V Trench & Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling This chip is used for:  power modules Applications:  drives Chip Type VCE IC SIGC68T170R3E 1700V 50A Die Size 8.
23 x 8.
25 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl.
gate pad) Gate pad size Area total Thickness Wafer size Max.
possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 8.
23 x 8.
25 4 x ( 2.
94 x 2.
97 ) 1.
18 x 1.
09 mm2 67.
9 190 µm 200 mm 392 Photoimide 3200 n...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)