www.
DataSheet4U.
com SIGC76T60R3 IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC76T60R3 VCE 600V ICn 150A Die Size 7.
87 x 9.
69 mm2 Package sawn on foil Ordering Code Q67050A4343-A101 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject ink dot size Recommended storage environment 7.
87 x 9.
6...

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