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DataSheet4U.
com SIGC81T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor This chip is used for: • power module BSM50GD120DLC Applications: • drives C G E Chip Type VCE ICn 50A Die Size 9.
08 X 8.
98 mm2 Package sawn on foil Ordering Code Q67041A4700-A001 SIGC81T120R2CL 1200V MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size...

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