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DataSheet4U.
com SIGC84T120R3L IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC84T120R3L VCE 1200V ICn 75A Die Size 9.
13 x 9.
15 mm2 Package sawn on foil Ordering Code Q67050A4266-A101 MECHANICAL PARAMETER: Raster size Emitter pad size ( include gate pad ) Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage...

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