Power
MOSFET
IRF530, SiHF530
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 10 V
26 5.
5 11 Single
0.
16
TO-220AB
D
S D G
G
S N-Channel
MOSFET
FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power
MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-indu...