Power
MOSFET
IRFPE30, SiHFPE30
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.
) (nC)
800 VGS = 10 V
78
Qgs (nC)
9.
6
Qgd (nC)
45
Configuration
Single
3.
0
TO-247AC
D
S
D G
G
S N-Channel
MOSFET
FEATURES • Dynamic dV/dt Rated • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third Generation Power
MOSFETs from Vishay provide the designer with best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247AC package is preferred for commercial-industrial appli...