SiHG17N60D
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Vishay Siliconix
D Series Power
MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max.
at 25 °C () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 90 14 22 Single
D
FEATURES
650 0.
340
• Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) • Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (FOM): Ron x Qg - Fast Switching • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912
TO-247AC
G
S D G S N-Channel
MOSFET
APPLICATIONS
• Consumer Electro...