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SiHG24N65EF
Vishay Siliconix
E Series Power
MOSFET with Fast Body Diode
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max.
() at 25 °C Qg max.
(nC) Qgs (nC) Qgd (nC) Configuration
700 VGS = 10 V
122 17 36 Single
0.
156
D
TO-247AC
G
S
D G
S N-Channel
MOSFET
FEATURES • Fast body diode
MOSFET using E series
technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance
please see www.
vishay.
com/doc?99912
APPLICATIONS
• Telecommunications - Server and telecom power suppli...