SiHG25N40D
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Vishay Siliconix
D Series Power
MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max.
at 25 °C () Qg max.
(nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 88 12 23 Single
D
FEATURES
450 0.
17
• Halogen-free According to IEC 61249-2-21 Definition • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) • Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (FOM): Ron x Qg - Fast Switching • Compliant to RoHS Directive 2011/65/EU
TO-247AC
G S D G S N-Channel
MOSFET
APPLICATIONS
• Consumer Electroni...