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SiHG80N60E
Vishay Siliconix
E Series Power
MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) typ.
() at 25 °C Qg max.
(nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
443 85 139 Single
0.
026
TO-247AC
D
S
D G
G
S N-Channel
MOSFET
FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance
please see www.
vishay.
com/doc?99912
APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction power supplies (PFC) • Lighting
- High-intensity discharge...