Power
MOSFET
IRLI520G, SiHLI520G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 5 V
12 3.
0 7.
1 Single
0.
27
TO-220 FULLPAK
D
GDS
G
S N-Channel
MOSFET
FEATURES • Isolated Package • High
Voltage Isolation = 2.
5 kVRMS (t = 60 s;
f = 60 Hz) • Sink to Lead Creepage Distance = 4.
8 mm • Logic-Level Gate Drive • RDS (on) Specified at VGS = 4 V and 5 V • Fast Switching • Ease of Paralleling • Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power
MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
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