Power
MOSFET
IRLI530G, SiHLI530G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 5.
0 V
28 3.
8 14 Single
0.
16
TO-220 FULLPAK
D
G
GDS
S N-Channel
MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES
• Isolated Package
• High
Voltage Isolation = 2.
5 kVRMS (t = 60 s; Available
f = 60 Hz)
RoHS*
• Sink to Lead Creepage Dist.
= 4.
8 mm
COMPLIANT
• Logic-Level Gate Drive
• RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching
• Ease of paralleling
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power
MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized...