Power
MOSFET
IRLIZ24G, SiHLIZ24G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 5.
0 V
18 4.
5 12 Single
0.
10
TO-220 FULLPAK
D
G
GDS
S N-Channel
MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
FEATURES • Isolated Package • High
Voltage Isolation = 2.
5 kVRMS (t = 60 s;
f = 60 Hz) • Sink to Lead Creepage Distance = 4.
8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching • Ease of Paralleling • Lead (Pb)-free
RoHS
COMPLIANT
DESCRIPTION
Third generation Power
MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance...