IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.
) (nC)
60 VGS = 5 V
8.
4
Qgs (nC)
3.
5
Qgd (nC)
6.
0
Configuration
Single
I2PAK (TO-262)
D2PAK (TO-263)
0.
20 D
G
SD
D G
S
G
S N-Channel
MOSFET
FEATURES • Halogen-free According to IEC 61249-2-21
Definition
• Advanced Process Technology
• Surface Mount (IRLZ14S, SiHLZ14S)
• Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)
• 175 °C Operating Temperature
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION Third generation Power
MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area.
This benefit, c...