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SiHP12N50C, SiHB12N50C, SiHF12N50C
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration
TO-220AB TO-220 FULLPAK
FEATURES
560 V VGS = 10 V 48 12 15 Single
D
• Low Figure-of-Merit Ron x Qg
0.
555
• 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Compliant to RoHS Directive 2002/95/EC
G
D
S GD S
D2PAK
(TO-263)
G
S
G D S
N-Channel
MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free TO-220AB SiHP12N50C-E3 D2PAK (TO-263) SiHB12N50C-E3 TO-220 FULLPAK SiHF12N50C-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
LIMIT PARAMETER Drain-Source
Voltage Gate-Source Volt...