New Product
N-Channel 30 V (D-S)
MOSFET
SiRA12DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () (Max.
)
0.
0043 at VGS = 10 V 30
0.
0060 at VGS = 4.
5 V
ID (A)a, g 25 25
Qg (Typ.
) 13.
6 nC
PowerPAK® SO-8
6.
15 mm
D 8D
7 D
6 D
5
S 1S
5.
15 mm
2 S
3 G
4
Bottom View
Ordering Information: SiRA12DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Gen IV Power
MOSFET
• 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • High Power Density DC/DC • Synchronous Rectification • VRMs and Embedded DC/DC
D
G
S N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
...