N-Channel 30 V (D-S)
MOSFET
SiS334DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 30
RDS(on) () Max.
0.
0113 at VGS = 10 V 0.
0146 at VGS = 4.
5 V
ID (A)a 20 20
PowerPAK® 1212-8
Qg (Typ.
) 5.
1 nC
3.
30 mm
D 8D
7 D
6 D
5
S 1S
3.
30 mm
2 S
3 G
4
Bottom View
Ordering Information: SiS334DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power
MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Notebook/POL
- Synchronous Buck - High Side
D
G
N-Channel
MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source Vo...