SiS778DN
Vishay Siliconix
N-Channel 30 V (D-S)
MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V) 30
RDS(on) () Max.
0.
0050 at VGS = 10 V 0.
0062 at VGS = 4.
5 V
ID (A)e 35 35
Qg (Typ.
) 13.
3 nC
PowerPAK 1212-8
3.
30 mm
D 8D
7 D
6 D
5
S 1S
3.
30 mm
2 S
3G
4
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • SkyFET Monolithic TrenchFET® Power
MOSFET and Schottky Diode • 100 % Rg and UIS Tested • Low Thermal Resistance PowerPAK®
Package with Small Size and Low 1.
07 mm Profile • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook PC - System and Memory - Low Side
D
Bottom View
Ordering Information: SiS778DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
G N-Channel...