N-Channel 100 V (D-S)
MOSFET
SiS892ADN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 100
RDS(on) () (Max.
) 0.
033 at VGS = 10 V 0.
036 at VGS = 7.
5 V 0.
047 at VGS = 4.
5 V
ID (A)f 28 26.
8 23.
5
Qg (Typ.
) 6.
1 nC
FEATURES • TrenchFET® Power
MOSFET
• 100 % Rg and UIS Tested • Capable of Operating with 5 V Gate Drive
• Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912
PowerPAK® 1212-8
3.
30 mm
S 1S
3.
30 mm
2 S
3G
4
D
8D 7 D 6 D 5
Bottom View
Ordering Information: SiS892ADN-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS • Telecom Bricks • Primary side switch • Synchronous Rectification • Industrial
D
G
S N-Channel
MOSFET
ABSOLUTE MAXIMUM ...