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SiUD412ED
Vishay Siliconix
N-Channel 12 V (D-S)
MOSFET
PowerPAK® 0806 Single D
3
0.
4 mm
0.
8 mm
1 0.
6 mm
Top View
PRODUCT SUMMARY
VDS (V) RDS(on) max.
() at VGS = 4.
5 V RDS(on) max.
() at VGS = 2.
5 V RDS(on) max.
() at VGS = 1.
8 V RDS(on) max.
() at VGS = 1.
5 V RDS(on) max.
() at VGS = 1.
2 V Qg typ.
(nC) ID (A) Configuration
2 S
Bottom View
1 G
12 0.
34 0.
4 0.
55 1.
2 2.
5 0.
47 0.
5 a, f Single
FEATURES • TrenchFET® power
MOSFET • Ultra small 0.
8 mm x 0.
6 mm outline • Ultra thin 0.
4 mm max.
height • Typical ESD protection 1500 V (HBM) • 1.
2 V rated RDS(ON) • 100% Rg tested • Material categorization: for definitions of compliance
please see www.
vishay.
com/doc?99912
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