Silicon Carbide
SJDP120R085
Normally-On Trench Silicon Carbide Power JFET
Features:
- Positive Temperature Coefficient for Ease of Paralleling
- Extremely Fast Switching with No "Tail" Current at 150 °C
- RDS(on) typical of 0.
075 Ω
-
Voltage Controlled
- Low Gate Charge - Low Intrinsic Capacitance
4
Product Summary
BVDS RDS(ON)max
ETS,typ
1200 0.
085 290
V Ω µJ
D(2,4)
G(1)
Applications: - Solar Inverter - SMPS - Power Factor Correction - Induction Heating - UPS - Motor Drive
TO-247
3 2 1
S(3) Internal Schematic
MAXIMUM RATINGS
Parameter
Symbol
Conditions
Continuous Drain Current
Pulsed Drain Current (1) Short Circuit Withstand Time Power Dissipation Gate-Source
Voltage
...