SJMN04A65D
Super Junction
MOSFET
N-Channel Super Junction
MOSFET
Features
Drain-Source
voltage: VDS=700V (@TJ=150C) Low drain-source On resistance: RDS(on)=0.
83Ω (Typ.
) Ultra low gate charge: Qg=10nC (Typ.
)
RoHS compliant device
100% avalanche tested
Ordering Information
Part Number
Marking
Package
SJMN04A65D
SJMN04A65
TO-252
D
G S
TO-252
Marking Information
SJMN 04A65
YWW
Column 1, 2: Device Code Column 3: Production Information e.
g.
) YWW
-.
Y: Year Code -.
WW : Week Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source
voltage Gate-source
voltage
Drain current (DC) (Note 1)
Drain current (Pulsed) (Note 1) Single puls...