SJMN190R65B
Super Junction
MOSFET
N-Channel Super Junction
MOSFET
Features
Drain-Source
voltage: VDS=700V (@TJ=150C) Low drain-source On resistance: RDS(on)=0.
19Ω (Max.
) Ultra low gate charge: Qg=20nC(Typ.
)
RoHS compliant device
100% avalanche tested
Ordering Information
Part Number
Marking
Package
SJMN190R65B
N190R65
TO-263
D
GS TO-263 (D2-PAK)
Marking Information
SJMN 190R65
YWWZ
Column 1: Manufacturer Column 2: Production Information
e.
g.
) YWWN -.
YWW: Data Code (year, week) -.
Z: Management Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source
voltage Gate-source
voltage
Drain current (DC) (Note 1)
Drain current (Pul...