SkySilicon
SKD4N65F
650V N-Channel
MOSFET
FEATURES
650V/4A RDS(ON)= 3Ω max@ VGS=10V
Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss High avalanche Current
PIN DESCRIPTION
Application
Power Supply
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol
Parameter
Maximum
VDSS VGSS
Drain-to-Source
Voltage Gate-to-Source
Voltage
650 ±30
ID Continuous Drain Current
TC=25°C TC=100°C
4 2.
2
PD TJ, TSTG
Maximum Power Dissipation Junction & Storage Temperature Range
TC=25°C TC=100°C
25 10 -55~150
Unit
V V
A
W °C
Thermal Characteristics
Symbol
Parameter
Rθjc Thermal Resistance-Junction to Case
Rθja Thermal Resistance-Junction ...