40 V, 80 A, 3.
1 mΩ Low RDS(ON) N ch Trench Power
MOSFET
SKI04033
Features
V(BR)DSS --------------------------------- 40 V (ID = 100 µA) ID ---------------------------------------------------------- 80 A RDS(ON) ----------3.
9 mΩ max.
(VGS = 10 V, ID = 58.
5 A) Qg------26.
4 nC (VGS = 4.
5 V, VDS = 20 V, ID = 58.
5 A)
Low Total Gate Charge High Speed Switching Low On-Resistance Capable of 4.
5 V Gate Drive 100 % UIL Tested RoHS Compliant
Package
TO-263
(4) D
(1) (2) (3) GDS
Applications
DC-DC converters
Synchronous Rectification
Power Supplies
Equivalent circuit
D(2)(4)
G(1) S(3)
Not to scale
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C
Param...