100 V, 66 A, 8.
8 mΩ Low RDS(ON) N ch Trench Power
MOSFET
SKI10123
Features
V(BR)DSS --------------------------------100 V (ID = 100 µA) ID ---------------------------------------------------------- 66 A RDS(ON) -------- 12.
1 mΩ max.
(VGS = 10 V, ID = 33.
0 A) Qg------45.
2 nC (VGS = 4.
5 V, VDS = 50 V, ID = 33.
0 A)
Low Total Gate Charge High Speed Switching Low On-Resistance Capable of 4.
5 V Gate Drive 100 % UIL Tested RoHS Compliant
Package
TO-263
(4) D
(1) (2) (3) GDS
Applications
DC-DC converters
Synchronous Rectification
Power Supplies
Equivalent circuit
D(2)(4)
G(1) S(3)
Not to scale
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C
Param...