N-Channel Power
MOSFET
General Features
VDS =30V,ID =150A RDS(ON) 1.
6 mΩ @ VGS=10V RDS(ON) 2.
4 mΩ @ VGS=4.
5V
Improved dv/dt capability High density cell design for ultra low Rdson Good stability and uniformity with high EAS Excellent package for good heat dissipation
Applications
Power switching application MB/VGA/Server Vcore POL Applications
SL150N03Q
Schematic diagram DFN5X6-8L top view
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous (TC=25℃) Drain Current-Continuous (TC=100℃)
Pulsed Drain Current Maximum Power Dissipation Derating factor
Operating Junction and Storage Temperature Rang...