SM9998DSQG
®
Dual N-Channel Enhancement Mode
MOSFET
Features
· 20V/9.
7A,
RDS(ON)= 7.
5mW (Max.
) @ VGS=4.
5V RDS(ON)= 7.
9mW (Max.
) @ VGS=4V RDS(ON)= 8.
2mW (Max.
) @ VGS=3.
7V RDS(ON)= 8.
7mW (Max.
) @ VGS=3.
1V RDS(ON)= 9.
9mW (Max.
) @ VGS=2.
5V
· ESD protection · 100% UIS Tested · Reliable and Rugged · Lead Free and Green Devices Available
(RoHS Compliant)
Applications
· Power Management in Notebook Computer,
Portable Equipment and Battery Powered Systems.
· One Cell Li-ion Battery Pack.
Pin Description
S2 S2G2
S1 S1G1
DFN2x3A-6_EP
DD
(3) (4) G1 G2
S1 S1 (1) (2)
S2 S2 (5) (6)
N-Channel
MOSFET
Ordering and Marking Information
SM9998DS
SM9998DS QG :
9998I XXXXX
Assembly Material Handling Cod...