SMB60N03-10L
N-Channel Enhancement-Mode
MOSFETs, Logic Level
Product Summary
V(BR)DSS (V)
30
rDS(on) (W)
0.
01 @ VGS = 10 V
ID (A)a
60
D
com
TO-263
G
G D S Top View S N-Channel
MOSFET
Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Currentb Repetitive Avalanche Energyb Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.
) L = 0.
1 mH L = 0.
05 mH TC = 25_C TC = 100_C TC = 25_C TC = 100_C
Symbol
VDS VGS ID IDM IS IAR EAS EAR PD TJ,...