SMG351AN
3A, 30V,RDS(ON) 60m£[ Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.
FET
RoHS Compliant Product
A L
Description
The SMG351AN uses advanced trench technology to provide excellent on-resistance with low gate change.
The device is suitable for use as a load switch or in PWM applications.
S
2 3 Top View
SC-59
B
1
Dim A B C D
J K
Min 2.
70 1.
40 1.
00 0.
35 1.
70 0.
00 0.
10 0.
20 0.
85 2.
40
Max 3.
10 1.
60 1.
30 0.
50 2.
10 0.
10 0.
26 0.
60 1.
15 2.
80
D G C
G H J K L S
Features
* Lower Gate Charge * Small Package Outline
H
Drain Gate Source
D
All Dimension in mm
G
S
Absolute Maximum Ratings
Parameter Drain-Source
Voltage Gate-Source
Voltage 3 Continuous Drain Current Pulse...