SML100H9
TO–258 Package Outline.
Dimensions in mm (inches)
17.
65 (0.
695) 17.
39 (0.
685) 6.
86 (0.
270) 6.
09 (0.
240) 1.
14 (0.
707) 0.
88 (0.
035)
17.
96 (0.
707) 17.
70 (0.
697)
13.
84 (0.
545) 13.
58 (0.
535)
1 2 3
4.
19 (0.
165) 3.
94 (0.
155) Dia.
21.
21 (0.
835) 20.
70 (0.
815)
N–CHANNEL ENHANCEMENT MODE HIGH
VOLTAGE POWER
MOSFETS
VDSS 1000V 9A ID(cont) RDS(on) 1.
100Ω
3.
56 (0.
140) BSC
19.
05 (0.
750) 12.
70 (0.
500)
5.
08 (0.
200) BSC 1.
65 (0.
065) 1.
39 (0.
055) Typ.
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
• Faster Switching • Lower Leakage • TO–258 Hermetic Package
D
G S
StarMOS is a new generation of high
voltage N–Channel enhancement mode power
MOSFETs.
This new technology minimises the JFET effe...