SML20W65
TO–267 Package Outline.
Dimensions in mm (inches)
N–CHANNEL ENHANCEMENT MODE HIGH
VOLTAGE POWER
MOSFETS
VDSS 200V 65A ID(cont) RDS(on) 0.
026Ω
• Faster Switching • Lower Leakage • TO–267 Hermetic Package
D
StarMOS is a new generation of high
voltage N–Channel enhancement mode power
MOSFETs.
This new technology minimises the JFET effect, increases packing density and reduces the on-resistance.
StarMOS also achieves faster switching speeds through optimised gate layout.
G S
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain – Source
Voltage Continuous Drain Current 3 Pulsed Drain Current 1 3 Gate – Source
Voltage ...