SML30A33
TO–3 Package Outline.
Dimensions in mm (inches)
25.
15 (0.
99) 26.
67 (1.
05) 10.
67 (0.
42) 11.
18 (0.
44) 1.
52 (0.
06) 3.
43 (0.
135)
6.
35 (0.
25) 9.
15 (0.
36)
N–CHANNEL ENHANCEMENT MODE HIGH
VOLTAGE POWER
MOSFETS
1.
47 (0.
058) 1.
60 (0.
063)
1
2
3 (case) 3.
84 (0.
151) 4.
09 (0.
161) 7.
92 (0.
312) 12.
70 (0.
50)
VDSS 300V 33A ID(cont) RDS(on) 0.
090Ω
• Faster Switching • Lower Leakage • TO–3 Hermetic Package
38.
61 (1.
52) 39.
12 (1.
54)
29.
9 (1.
177) 30.
4 (1.
197)
Pin 1 – Gate
16.
64 (0.
655) 17.
15 (0.
675)
Pin 2 – Source
Case – Drain
D
22.
23 (0.
875) max.
G S
StarMOS is a new generation of high
voltage N–Channel enhancement mode power
MOSFETs.
This new technology minimises the JFET effect, in...