Green Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SP4412
Ver 1.
1
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
19 @ VGS=10V
30V 16A 31 @ VGS=4.
5V
FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
Pin 1
TSON 3.
3 x 3.
3
D5 D6 D7 D8
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source
Voltage VGS Gate-Source
Voltage
TC=25°C
ID
Drain Current-Continuous a c
TC=100°C TA=25°C
TA=70°C IDM -Pulsed c
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TA=25°C TA=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
...