Green Product
Sa mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
SP8013
Ver 1.
0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
-20V
-20A
7.
9 @ VGS=-10V 11.
2 @ VGS=-4.
5V
FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
Pin 1
TSON 3.
3 x 3.
3
D5 D6 D7 D8
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source
Voltage
VGS Gate-Source
Voltage ID Drain Current-Continuous c IDM -Pulsed a c
TA=25°C TA=70°C
PD
Maximum Power Dissipation
TA=25°C TA=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance...