Green Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SP8255
Ver 1.
1
PRODUCT SUMMARY
VDSS 20V
ID RDS(ON) (mΩ) Max
15.
0 @ VGS=4.
5V 16.
0 @ VGS=4.
0V 7A 16.
5 @ VGS=3.
7V 18.
0 @ VGS=3.
1V 23.
0 @ VGS=2.
5V
FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
DFN 2X5 D1/D2
G2 S2 S2
G1 S1S1
(Bottom view)
G1 3 S1 2 S1 1
Bottom Drain Contact
4 G2 5 S2 6 S2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source
Voltage
VGS Gate-Source
Voltage
ID
Drain Current-Continuous a c
TA=25°C TA=70°C
IDM -Pulsed c
PD
Maximum Power Dissipation a
TA=25°...