Green Product
SP8651
Ver 3.
7
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
14.
0 @ VGS=4.
5V 15.
0 @ VGS=4.
0V 24V 10A 16.
0 @ VGS=3.
7V 17.
5 @ VGS=3.
1V 21.
0 @ VGS=2.
5V
FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
D2 D2 D1
5 6 7 8
4 3 2 1
G2 S2 G1 S1
S mini 8
P IN 1
D1
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous -Pulsed
d c ad
Limit 24 ±12 TA=25°C TA=70°C 10 8 60 56 TA=25°C TA=70°C 1.
32 0.
84 -55 to 150
...