Isc N-Channel
MOSFET Transistor
INCHANGE Semiconductor
SPA16N50C3
·FEATURES ·Drain-source on-resistance:
RDS(on) ≤ 250mΩ@10V ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
500
V
VGSS
Gate-Source
Voltage
±20
V
ID
Drain Current-Continuous @Tc=25℃
(VGS at 10V)
Tc=100℃
16 10
A
IDM
Drain Current-Single Pulsed
48
A
PD
Total Dissipation @TC=25℃
34
W
Tj
Max.
Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL...