Isc N-Channel
MOSFET Transistor
·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
500
VGS
Gate-Source
Voltage
±20
ID
Drain Current-Continuous
4.
5
PD
Total Dissipation @TC=25℃
50
Tj
Max.
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A W ℃ ℃
SPB04N50C3
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to...