Part Number
|
SPB2026Z |
Manufacturer
|
RFMD |
Description
|
0.7GHz to 2.2GHz 2W InGaP AMPLIFIER |
Published
|
Nov 29, 2014 |
Detailed Description
|
SPB2026Z 0.7GHz to 2.2GHz 2W InGaP Amplifier
SPB2026Z
0.7GHz to 2.2GHz 2W InGaP AMPLIFIER
NOT FOR NEW DESIGNS
Packag...
|
Datasheet
|
SPB2026Z
|
Overview
SPB2026Z 0.
7GHz to 2.
2GHz 2W InGaP Amplifier
SPB2026Z
0.
7GHz to 2.
2GHz 2W InGaP AMPLIFIER
NOT FOR NEW DESIGNS
Package: SOF-26
NOT FOR NEW DESIGNS
Product Description
RFMD’s SPB2026Z is a high linearity single-stage class AB Heterojunction Bipolar
Transistor (HBT) amplifier housed in a surface-mountable plastic encapsulated
package.
This HBT amplifier is made with InGaP on GaAs device technology and
fabricated with MOCVD for an ideal combination of low cost and high reliability.
This
product is well suited for use as a driver stage in macro/micro-cell infrastructure
equipment or as the final output stage in pico-cell infrastructure equipment.
It can
run from a 3V to 6V supply.
It...
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