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Part Number
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SPB80N10L |
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Manufacturer
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Infineon Technologies |
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Description
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SIPMOS Power-Transistor |
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Published
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Jun 7, 2005 |
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Detailed Description
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Preliminary data
SPI80N10L SPP80N10L,SPB80N10L
SIPMOS Power-Transistor
Feature
Product Summary VDS RDS(on) ID
P-TO26...
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Datasheet
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SPB80N10L
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Overview
Preliminary data
SPI80N10L SPP80N10L,SPB80N10L
SIPMOS Power-Transistor
Feature
Product Summary VDS RDS(on) ID
P-TO262-3-1 P-TO263-3-2
N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated
100 14 80
P-TO220-3-1
V A
m
Type SPP80N10L SPB80N10L SPI80N10L
Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1
Ordering Code Q67042-S4173 Q67042-S4171 Q67042-S4172
Marking 80N10L 80N10L 80N10L
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TC=25°C TC=100°C
Symbol ID
Value 80 58
Unit A
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg
320 700 25 6 ±20 250 -55.
.
.
+175 55/175/...
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