Part Number
|
SPD22N08S2L-50 |
Manufacturer
|
Infineon Technologies |
Description
|
OptiMOS Power-Transistor |
Published
|
Jun 7, 2005 |
Detailed Description
|
SPD22N08S2L-50 OptiMOS® Power-Transistor
Feature
• N-Channel
Product Summary VDS R DS(on) ID 75 50 25
P- TO252 -3-11
V...
|
Datasheet
|
SPD22N08S2L-50
|
Overview
SPD22N08S2L-50 OptiMOS® Power-Transistor
Feature
• N-Channel
Product Summary VDS R DS(on) ID 75 50 25
P- TO252 -3-11
V mΩ A
• Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated
Type SPD22N08S2L-50
Package Ordering Code P- TO252 -3-11 Q67060-S6062
Marking 2N08L50
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TC=22°C
Symbol ID
Value 25 18
Unit A
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot T j , Tstg
100 94 7.
5 6 ±20 75 -55.
.
.
+175 55/175/56 kV/µs V W °C mJ
Avalanche energy, single pulse
ID=22A, V DD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax 1) Reverse diode ...
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